Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1797015 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Mori, N. Fujimoto, N. Akae, K. Uotani, T. Tambo, C. Tatsuyama,