Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1797082 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
Plastically relaxed GeSi films with a fraction of Ge ranging from 0.19 to 0.29 are grown on Si(0 0 1) substrates with the use of a low-temperature (350 °C) buffer layer of Si. Their root mean square (RMS) surface roughness is in the 1.7-2.7 nm range. Addition of Sb as a surfactant smoothing the surface of the stressed film during its growth is shown to reduce the surface roughness of the plastically relaxed heterostructure. The RMS roughness lower than 1 nm is reached for a film with a 0.29 fraction of Ge and a threading dislocation density close to 106 cmâ2.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yu. B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov,