Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1797119 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
Growth interruption during the formation of InAs quantum dots (QDs) on a GaAs (1Â 0Â 0) substrate has been investigated in detail. A total of 1.9 mono layers (MLs) of an InAs QD nucleation layer was grown continuously to form a seed with high density. Further, the supply of up to 3Â MLs of InAs with a growth interruption of 15Â s for every 0.11Â ML showed that photoluminescence intensity was improved by 23 times and red-shifted the photoluminescence emission nearly 42Â nm. The continuous growth up to 1.9Â MLs helped to double the dot density. 3.3Â MLs of InAs embedded in a GaAs matrix, grown using interruption showed a strong RT photoluminescence peak at around 1272Â nm with a very narrow FWHM of 27.1Â meV.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Shanmugam Saravanan, Hitoshi Shimizu,