ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations

MCT is an important semiconductor for the manufacture of infrared detectors. The alloyed substrates have a closer lattice match with Hg1−xCdxTe. Furthermore, these substrates usually have a lower dislocation density. Both facts determine a lower generation of lineal defects during growth. This fact could produce a larger carrier lifetime and, as a consequence, better electrical properties of devices. On the other hand the surface morphology of ISOVPE MCT epitaxial films only depends on the crystallographic orientation, being independent of the use of pure or alloyed substrates.