| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1797213 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
W. Lei, Y.H. Chen, Y.L. Wang, X.Q. Huang, Ch. Zhao, J.Q. Liu, B. Xu, P. Jin, Y.P. Zeng, Z.G. Wang,