Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1797251 | Journal of Crystal Growth | 2006 | 6 Pages |
Abstract
GexSi1−x/Si(0 0 1) heterostructures with constant composition of Ge (x=0.19–0.32) are grown by low-temperature (300–400 °C) molecular-beam epitaxy. Transmission electron microscopy reveals dislocation half-loops in the subsurface region of the stressed film, which is associated with nucleation of dislocations on elements of the three-dimensional relief on the surface of the growing or annealed film. Dislocation-nucleation centers are reproductive and form families of closely located misfit dislocations of the same sign. The use of a hydrogen atmosphere for annealing the GeSi film yields a lower rate of generation of misfit dislocations than annealing in vacuum or argon.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov,