| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1797326 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.H. Hsu, W.R. Chen, Y.K. Su, R.W. Chuang, S.J. Chang, W.C. Chen,