MBE growth optimization of InN nanowires

The growth of InN using plasma-assisted MBE has been investigated within the parameter range of columnar growth to obtain uniform whiskers with a high crystalline quality. The column morphology and crystalline quality were investigated by scanning electron microscopy (SEM) and photoluminescence (PL), respectively. The PL peak energy varies in the range 0.76–0.82 eV, while the peak intensity changes more than two orders of magnitude with the growth conditions. The PL intensity increases with column length and growth temperature. These findings suggest higher crystalline quality and less intrinsic doping at higher growth temperature. Columns grown at higher temperatures are very nonuniform in diameter.