| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1797410 | Journal of Crystal Growth | 2006 | 6 Pages |
Abstract
The reaction kinetics of stacked layers of binary In-, Ga- and Cu-selenides is investigated by differential thermal analysis using different constant heating rates. We found that the kinetics of the formation of CuInSe2 depends on the binary selenides being present. The kinetic parameters of the reactive crystallization of CuInSe2 and CuGaSe2 were derived.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Purwins, A. Weber, P. Berwian, G. Müller, F. Hergert, S. Jost, R. Hock,