Kinetics of SiGe chemical vapor deposition from chloride precursors

The paper represents the results of analysis of SiGe growth in a wide range of the growth conditions based on the experimental data on SiGe chemical vapor deposition in different reactor systems. The deposition mechanisms are explained using an original model of the growth kinetics. The effects of the temperature and precursor flow rates on SiGe composition and growth rate are discussed in detail. It is shown that an increase of the growth rate due to the Ge incorporation can be fairly noticeable but it takes place only at low temperatures. Ge concentration in SiGe decreases at high temperatures due to both kinetic and thermodynamic reasons. Effect of the germanium precursor type on the growth rate and alloy composition is also reported.