Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1797440 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
Bismuth surfactant is shown to have dramatic effects on the microstructure of GaAsSb alloys grown on nominally [0Â 0Â 1] InP substrates by organometallic vapor phase epitaxy. The addition of Bi at a ratio of 1% Bi/Ga in the gas flow results in the formation of CuAu {1Â 0Â 0} and chalcopyrite {2Â 1Â 0} ordered and disordered structures. Domains are approximately 10-20Â nm in diameter for both undoped and heavily carbon-doped GaAsSb layers, and they account for â¼40% (CuAu) and â¼3% (chalcopyrite) of the total surface area. The addition of this small amount of Bi does not affect growth rate, Sb concentration, or surface morphology. Ordered domains with c-axes along the [0Â 0Â 1] growth direction were not observed. Photoluminescence and optical absorption measurements did not detect band gap changes in GaAsSb samples with and without {1Â 0Â 0} and {2Â 1Â 0} ordering, respectively.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
W.Y. Jiang, J.Q. Liu, X. Zhang, M.L.W. Thewalt, K.L. Kavanagh, S.P. Watkins,