| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1797442 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
In0.45Ga0.55As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.A. Chang, J.T. Chu, C.T. Ko, H.C. Kuo, C.F. Lin, S.C. Wang,