Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1797455 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
A number of applications require deposition of thick, high-quality AlN films with low stress on Si substrates. Conventional high-temperature MOCVD growth produced an AlN film that exhibited cracking for a film thickness greater than 300 nm due to the large tensile stress generated during the growth process. Alternative methods, including the introduction of low-temperature AlN interlayers, were developed to control the strain developed during MOCVD growth of thick AlN on Si. Additionally, an alternating sequence of AlN and AlGaN—with up to 70% AlN—in a superlattice structure was found to decrease cracking in the films. Structures with thin crack-free GaN cap layers were demonstrated.
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Authors
M.A. Mastro, C.R. Eddy Jr., D.K. Gaskill, N.D. Bassim, J. Casey, A. Rosenberg, R.T. Holm, R.L. Henry, M.E. Twigg,