Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

InGaAsN-GaAsSb type-II “W” quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1−ySby and InGaAs1−xNx   can be grown with compositions of y=0.3y=0.3 and x=0.02x=0.02. “W” structures with different N contents indicate that emission wavelengths in the 1.4–1.6 μm range can be achieved. The use of GaAs0.85P0.15 tensile strained barrier layers is found to significantly improve the photoluminescence intensity of the “W” structure and result in a wavelength blueshift.