Electrical and proximity-magnetic effects induced quantum Goos–Hänchen shift on the surface of topological insulator

•Quantum Goos–Hänchen shift of the surface on three-dimensional topological insulators is first investigated.•The magnetization affects quantum Goos–Hänchen shift of the surface on three-dimensional topological insulators.•Quantum Goos–Hänchen shift of the surface on three-dimensional topological insulators can be manipulated by the gate voltages.

We use scattering matrix method to theoretically demonstrate that the quantum Goos–Hänchen shift of the surface on three-dimensional topological insulator coated by ferromagnetic strips is sensitive to the magnitude of ferromagnetic magnetization. The dependence of quantum Goos–Hänchen shift on magnetization and gate bias is investigated by performing station phase approach. It is found that quantum Goos–Hänchen shift is positive and large under the magnetic barrier but may be positive as well as negative values under the gate bias. Furthermore, the position of quantum Goos–Hänchen peak can also be modulated by the combination of gate bias and proximity magnetic effects. Our results indicate that topological insulators are another candidates to support quantum Goos–Hänchen shift.