| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1800748 | Journal of Magnetism and Magnetic Materials | 2012 | 6 Pages |
Abstract
We report experiments where magnetization in GaMnAs ferromagnetic semiconductor is manipulated via strain or electric current. In both cases, charge carrier holes become partially polarized due to the anisotropic modification of holes spectra caused by spin–orbit interactions, and this polarization exerts spin torque sufficient to rotate ferromagnetic domains.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Leonid P. Rokhinson, Mason Overby, Alexandr Chernyshov, Yuli Lyanda-Geller, Xinyu Liu, Jacek K. Furdyna,