| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1800859 | Journal of Magnetism and Magnetic Materials | 2011 | 5 Pages |
The structural, magnetic and electrical transport properties of Zn-doped antiperovskite compounds Ga1−xZnxCMn3 (0≤x≤0.30) have been investigated. After partial substitution of Zn for Ga, the Curie temperature increases monotonously and the ground antiferromagnetic (AFM)-ferromagnetic intermediate (FI) phase transition is gradually suppressed. With increasing the doping level x, the saturated magnetizations decreases gradually firstly for x≤0.20, then increases with increasing x. The electrical transport properties of Ga1−xZnxCMn3 are studied at different magnetic fields. Enhanced giant magnetoresistance (GMR) was observed around the AFM-FI transition. With increasing x, the maximal values and peak widths of GMR increase. Particularly, for x=0.20, GMR reaches a maximum value of 75%, spanning a temperature range of 80 K at 50 kOe and displays the behavior of strongly depending on the magnetization history. The possible origins are discussed.
► We studied the structural, magnetic and electrical transport properties of Zn-doped antiperovskite compounds Ga1−xZnxCMn3 ► Enhanced GMR is observed around the antiferromagnetic-ferromagnetic intermediate phase transition. ► Maximal value and peak widths of MR increase quickly by increasing the doping level x. ► More interestingly, for x=0.20, MR could reach a maximum value of 75%, spanning a temperature range of 80 K at 50 kOe.
