Lateral shifts of spin electron beams in antiparallel double δ-magnetic-barrierδ-magnetic-barrier nanostructure

We investigate the Goos–Hänchen (GH) effect of spin electron beams in a magnetic-barrier (MB) nanostructure consisting of antiparallel double δ-MBsδ-MBs, which can be experimentally realized by depositing two ferromagnetic (FM) stripes on top and bottom of the semiconductor heterostructure. GH shifts for spin electron beams across this type of MB nanostructures, is derived exactly, with the help of the stationary phase method. It is shown that GH shifts depend strongly on the spin directions for double δ-MBsδ-MBs with unidentical magnetic strengths, giving rise to a considerable spin polarization effect. It also is shown that spin polarization of GH shifts is closely relative to the separation and magnetic-strength difference of two δ-MBsδ-MBs. These interesting properties may provide an alternative scheme to spin-polarize electrons into the semiconductor, and the devices can serve as tunable spin beam splitters.

► Spin Goos–Hänchen effect of electron beams through a kind of MB nanostructures. ► GH shift depends greatly on electron-spins, which is used to spin polarize electrons in semiconductor. ► Spin polarization in GH shift is tunable. ► A tunable spin beam splitter is achieved.