Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1800987 | Journal of Magnetism and Magnetic Materials | 2010 | 5 Pages |
Abstract
The La0.8Sr0.2MnO3/ZnO heterostructures with different thicknesses of ZnO films are fabricated by using RF magnetron sputtering technique. The heterojunctions exhibit excellent rectifying properties at 300 K. At low temperatures the temperature dependent junction resistance exhibits a metal–insulator transition like behavior. A magnetic field strongly impacts on electrical characteristics of La0.8Sr0.2MnO3/ZnO p–n junctions, i.e., depressing the junction resistance greatly and driving the metal–insulator transition temperature (TMI) towards higher temperatures. Large magnetoresistance is observed below TMI, and it increases with increasing magnetic field and almost saturates at 5 T, i.e., above −90% at 100 K and 5 T.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuchun Feng, Ming Zhang,