Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1801095 | Journal of Magnetism and Magnetic Materials | 2009 | 4 Pages |
Abstract
The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Tae Hwan Lee, Hyun Cheol Koo, Kyung Ho Kim, Hyung-jun Kim, Joonyeon Chang, Suk-Hee Han, Jinki Hong, Sang Ho Lim,