Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1801503 | Journal of Magnetism and Magnetic Materials | 2010 | 5 Pages |
This work focuses on the properties of 10–15 μm thick barium M-type hexaferrite (BaFe12O19 or BaM) films deposited by non-reactive RF magnetron sputtering on alumina substrates. High deposition rates were achieved through deposition at room temperature and operation at an RF power of 100 W. By varying sputtering gas pressure, the dc magnetic properties were correlated with structural, morphological and compositional properties obtained by X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS), respectively. A deposition pressure of P=3 Pa enables one to reach the best compromise between high deposition rate (0.75 μm/h) and adequate crystallographic, stoichiometric and magnetostatic properties. Finally the gyromagnetic properties at high frequency were assessed through the characterization of coplanar isolator up to 60 GHz. As such, hexaferrite films prepared using this technique may offer opportunities for the next generation of self-biased planar microwave devices.