| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1802044 | Journal of Magnetism and Magnetic Materials | 2007 | 6 Pages |
Abstract
In addition we observe a significant gate voltage dependence of the magnetic switching field which we attribute to carrier density variations in the electric field exposed GaMnAs regions causing a substantial change in the magneto-crystalline anisotropy profile.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Wunderlich, T. Jungwirth, A.C. Irvine, B. Kaestner, A.B. Shick, R.P. Campion, D.A. Williams, B.L. Gallagher,