Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1802201 | Journal of Magnetism and Magnetic Materials | 2010 | 5 Pages |
Abstract
The microscopic mechanism of the tunneling magnetoresistance (TMR) in Cr-doped GaN/AlN/GaN (0 0 0 1) trilayer junctions is studied based on density functional theory calculations. For enhanced performance, we propose δ-Cr-layerδ-Cr-layer doping in GaN, close to the GaN/AlN interfaces. Depending on the doping concentration, Cr dopants produce local metallic (1 ML) or half-metallic (12 and 14 ML) states surrounded by the host semiconductor materials. Very thin AlN barriers are predicted to yield a low TMR effect. These results help explain existing experimental results and are expected to be valuable with regard to the practical fabrication of improved pure semiconductor spintronic devices.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
X.Y. Cui, B. Delley, A.J. Freeman, C. Stampfl,