Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1802355 | Journal of Magnetism and Magnetic Materials | 2008 | 4 Pages |
Abstract
We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K. Tamanoi, M. Sato, M. Oogane, Y. Ando, T. Tanaka, Y. Uehara, T. Uzumaki,