| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1802355 | Journal of Magnetism and Magnetic Materials | 2008 | 4 Pages |
Abstract
We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.
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Condensed Matter Physics
Authors
K. Tamanoi, M. Sato, M. Oogane, Y. Ando, T. Tanaka, Y. Uehara, T. Uzumaki,