Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1802545 | Journal of Magnetism and Magnetic Materials | 2009 | 4 Pages |
Abstract
Strontium ferrite (SrM) thin films deposited on thermally oxidized silicon wafer (SiO2/Si) and single crystal sapphire with (0 0 l) orientation (Al2O3(0 0 l)) substrate using Pt underlayer were prepared by DC magnetron sputtering system. It was found that the intensity of (1 1 1) line for Pt and that of (0 0 l) diffraction line for SrM increases with increasing substrate temperature, Tu. The c-axis dispersion angle, Îθ50, of SrM(0 0 8) depends on that of Pt underlayer. Both dispersion angle of Pt(1 1 1) and SrM(0 0 8) decrease with increasing temperature. It was observed that the saturation magnetization of SrM/Pt deposited on SiO2/Si is higher than that of Al2O3 substrate. The coercivity and remanent squareness ratio in perpendicular direction are higher than that in in-plane direction. The maximum of coercivity in perpendicular direction of SrM/Pt films deposited on single crystal Al2O3 is about 4.2 kOe.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Arkom Kaewrawang, Ali Ghasemi, Xiaoxi Liu, Akimitsu Morisako,