Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1802826 | Journal of Magnetism and Magnetic Materials | 2009 | 4 Pages |
Abstract
Spectral dependences of refractive and absorption indices n(hν), k(hν) (hν=1.2-4.4 eV) and the transversal Kerr effect δ(hν) (hν=0.5-4.4 eV) in In(Ga)MnAs layers fabricated by laser deposition have been investigated. Spectra of the diagonal and off-diagonal components of the dielectric permittivity tensor of these layers have been calculated. Comparison of the spectral dependences δ(hν), εâ²(hν) and εâ²2Ã(hν)2 of the In(Ga)MnAs layers with similar spectra for MnAs has been carried out. Particular features in the spectra of the In(Ga)MnAs layers have been explained by a competition of contributions of the In1âx(Ga1âx)MnxAs host and MnAs inclusions.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E.A. Gan'shina, L.L. Golik, V.I. Kovalev, Z.E. Kun'kova, B.N. Zvonkov, A.N. Vinogradov,