Magnetic behavior of the II–V-diluted magnetic semiconductor Cd1−xMnxSb

Polycrystalline samples of the II–V-diluted magnetic semiconductor Cd1−xMnxSb (x=0.05–0.20) were synthesized. Standard high temperature ceramic methods under an inert atmosphere were utilized for sample fabrication. Structural characterization was done using X-ray diffractometry (XRD), which indicated that a simple substitution of Mn for Cd is probably not occurring. Hysteresis, ac susceptibility, dc magnetization, and spontaneous magnetization measurements were performed for Cd0.90Mn0.10Sb. The hysteresis data indicated the presence of a ferromagnetic component. Ferromagnetism in the Cd0.90Mn0.10Sb system is likely due to two sources: Mn spins in small Mn-rich regions and a small amount of MnSb in a minority phase. Analysis of the spontaneous magnetization as a function of temperature for Cd0.90Mn0.10Sb yielded the value 0.172 for the critical exponent β. In MnSb, β was found to have the value 0.379, which is close to the theoretical value for 3D-Heisenberg systems. Thus, in Cd0.90Mn0.10Sb, the ferromagnetism is not of the 3D-Heisenberg type; rather, it is closer to 2D Ising behavior, indicating reduced effective dimensionality.