Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1803563 | Journal of Magnetism and Magnetic Materials | 2008 | 5 Pages |
Abstract
The present study examines the artificial control of grain-boundary resistance and its contribution to the magneto-transport properties of [Co(1 nm)/Bi(2.5 nm)]n (n=10 or 20) line structures on the Si(0 0 1)/SiNx substrate. Conventional patterning and deposition processes are applied for the fabrication of a device that consists of five-line structures with a line width of 2 μm. A ÎR/R=80% ratio was observed in the five-line structure of [Co(1 nm)/Bi(2.5 nm)]10 multilayers at 10 K. Our measurements indicate that grain-boundary effects can be associated with the large ÎR/R ratio of transverse magnetoresistance.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Christides, Th. Speliotis, M. Chatzichristidi, I. Raptis,