| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1804128 | Journal of Magnetism and Magnetic Materials | 2007 | 4 Pages |
Abstract
A theory is developed to describe the pinhole formation and growth in magnetic tunneling junctions (MTJs) using the Kolmogorov–Avrami (KA) model. The theory relates the pinhole dynamics and the gradual degradation of the imperfect barrier layers and then the magnetic junctions under external stress. Form this study, analytical expressions of junction resistance and magnetoresistive (MR) ratio as functions of time are provided to characterize the junction degradation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Haiwen Xi, Scott Franzen, Javier I. Guzman, Sining Mao,