Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1804296 | Journal of Magnetism and Magnetic Materials | 2007 | 4 Pages |
Abstract
Si1âxMnx diluted magnetic semiconductors with xâ5% with a ferromagnetic structure were formed through Mn ion implantation and post-annealing. The temperature- and magnetic field-dependent magnetization were measured by magnetometry using a superconducting quantum interference device. The Si0.95Mn0.05 materials were found to be homogeneous, and to exhibit p-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The low-temperature (T=10K) photoluminescence spectra exhibited Mn-related free-to-donor pair transitions for the Si1âxMnx materials with xâ5%. A Mn double-donor level in these samples was found to be Mn substituted for Si (MnSi) and located around 290Â meV above the valence band, suggesting that the ferromagnetism observed in Mn-implanted Si material is hole-mediated ferromagnetism.
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Authors
I.T. Yoon, C.J. Park, T.W. Kang,