Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis

We present a self-consistent analysis of the Curie temperature (Tc) modulation in Mn δ-doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schrödinger and Poisson equations for different Mn δ-doping positions (ds) and uncompensated Mn atom concentration (NMn). Under low dopant concentration (NMn<4×1015/m2), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. Tc of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.