Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1805339 | Journal of Magnetism and Magnetic Materials | 2006 | 7 Pages |
Abstract
We have produced a series of Sr2FeMoO6+x films from 15 to 240Â nm thick on MgO, LaAlO3, Sr0.5Ba0.5TiO3, and SrTiO3 substrates and measured their electrical and magnetic properties. It is clear that as the nominal lattice mismatch increases the magnetisation decreases and when the mismatch is small there is no dependence of the magnetisation on the film thickness for films above 30Â nm thick. Evidence for a thin antiferromagnetic (AF) rich interface layer in the thinner films on Sr0.5Ba0.5TiO3 and SrTiO3 comes from the magnetisation data, but a clear influence is seen in the electrical dependence on temperature. However, for the 120 and 240Â nm thick films there is little evidence of this AF layer, and an almost universal conduction mechanism is seen. This mechanism applies also to the 240Â nm thick films on LaAlO3 and can also explain the observed magnetoresistance. Films on MgO show evidence of the often seen re-organised layer at the film/substrate interface.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R. Boucher,