Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1805388 | Journal of Magnetism and Magnetic Materials | 2006 | 5 Pages |
Abstract
Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Darshan C. Kundaliya, S.B. Ogale, S. Dhar, K.F. McDonald, E. Knoesel, T. Osedach, S.E. Lofland, S.R. Shinde, T. Venkatesan,