| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1805444 | Journal of Magnetism and Magnetic Materials | 2006 | 5 Pages |
Abstract
Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (Jc0) down to 2 MA/cm2, which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlOx MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yiming Huai, Mahendra Pakala, Zhitao Diao, Dmytro Apalkov, Yunfei Ding, Alex Panchula,