| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1808248 | Physica B: Condensed Matter | 2016 | 6 Pages |
Abstract
The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V.A. Kukushkin,