| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1808258 | Physica B: Condensed Matter | 2016 | 7 Pages |
Abstract
This project employed high-resolution X-ray diffraction, Raman spectroscopy and photoluminescence spectroscopy to investigate the structural, optical and band energy properties of the MOCVD epitaxial heterostructures, AlxGa1âxAs:Mg/GaAs(100), with different levels of magnesium doping. It was shown that the choice of technological conditions used in the preparation of the AlxGa1âxAs:Mg alloy allowed different types of conductivity and it was also possible to achieve significantly different concentrations of the charge carriers in the epitaxial film.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
P.V. Seredin, A.S. Lenshin, I.N. Arsentyev, I.S. Tarasov, Тatiana Prutskij, Harald Leiste, Monika Rinke,