Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1808316 | Physica B: Condensed Matter | 2016 | 10 Pages |
Abstract
Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the properties of thin aluminium nitride films (<200 nm) that were obtained by ion-plasma reactive sputtering on GaAs substrates with different orientations were studied.The films of aluminium nitride can have a refractive index within the range of 1.6–4.0 for the wavelength band around ~250 nm and an optical band-gap of ~5 eV. It was shown that the morphology, surface composition and optical functional characteristics of AlN/GaAs heterophase systems can be controlled owing to the use of misoriented GaAs substrates as well choice of the technological parameters used for the film growth.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
P.V. Seredin, V.M. Kashkarov, I.N. Arsentyev, A.D. Bondarev, I.S. Tarasov,