Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1808465 | Physica B: Condensed Matter | 2016 | 14 Pages |
Abstract
Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Tiutiunnyk, V. Akimov, V. Tulupenko, M.E. Mora-Ramos, E. Kasapoglu, F. Ungan, I. Sökmen, A.L. Morales, C.A. Duque,