Article ID Journal Published Year Pages File Type
1808465 Physica B: Condensed Matter 2016 14 Pages PDF
Abstract

Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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