Influence of position-dependent effective mass on third-order nonlinear optical susceptibility of impurity doped quantum dots in the presence of Gaussian white noise

We inspect the influence of position-dependent effective mass (PDEM) on the third-order nonlinear optical susceptibility (TONOS) of impurity doped quantum dots (QDs) in the presence and absence of noise. The TONOS profiles have been followed as a function of incident photon energy for different values of PDEM. Using PDEM the said profile considerably deviates from that of fixed effective mass (FEM). However, a switch from one mode of application of noise to another primarily alters the TONOS peak intensity. The observations highlight the possibility of tuning the TONOS profiles of doped QD systems exploiting noise and PDEM.