Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1808658 | Physica B: Condensed Matter | 2016 | 4 Pages |
Abstract
Zinc oxide (ZnO) nanorods have been synthesized by a two-step chemical bath deposition process on silicon substrates having different dopant densities and orientations. Scanning electron microscopy and X-ray diffraction analysis reveal that the orientation of the Si substrate does not affect the orientation, distribution or crystallinity of the nanostructures. The electrical properties of the ZnO/Si heterojunction are also investigated by current-voltage (I-V) measurements. The ideality factor is found to be 2.6 at 295Â K, indicating that complex current transport mechanisms are at play. Temperature dependent I-V characteristics have been used to determine the dominant transport mechanism. The experimental results suggest that in the low bias region the current is dominated by a trap assisted multi-step tunneling process.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.R. Tankio Djiokap, Z.N. Urgessa, C.M. Mbulanga, A. Venter, J.R. Botha,