| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1808900 | Physica B: Condensed Matter | 2015 | 8 Pages |
Abstract
The effect of changes of the Nb content and annealing on charge–voltage and current–voltage characteristics of film structures Pt/SrBi2(Ta1−xNbx)2O9/Pt/TiO2/SiO2/Si-substrate with х=0, 0.1, 0.2 was studied theoretically and experimentally.Theoretical modeling, which takes into account the mobile charged donors impact on the features of charge–voltage and current–voltage characteristics of ferroelectric-semiconductor films, revealed the changes of conductivity value and ferroelectric parameters. The results of theoretical analysis and experimental results are in qualitative agreement.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N.V. Morozovsky, A.V. Semchenko, V.V. Sidsky, V.V. Kolos, A.S. Turtsevich, E.A. Eliseev, A.N. Morozovska,