Interband optical transitions of a strained InxGa1−xAs/GaAs quantum dot/wetting layer with various In mole fractions

In this paper, a numerical approach for calculating interband optical transitions of an InxGa1−xAs/GaAs conical shaped quantum dot is presented with different In mole fraction. The electronic structure was calculated by solving one-band effective-mass Schrödinger equation taking into account the strain effects. The simulations are performed by the employing finite element method in cylindrical co-ordinates. The wetting layer thickness and QD height effects on the S and P bands energies are also investigated to be a guidance of optimal structure design for optoelectronic devices. The obtained numerical results indicate a red shift in photoluminescence spectra with increasing wetting layer thickness which are in a good agreement with experimental data.