| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1809376 | Physica B: Condensed Matter | 2014 | 5 Pages |
Abstract
Photoluminescence (PL) measurements were performed in Si/Si1−xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.A. Mala, L. Tsybeskov, D.J. Lockwood, X. Wu, J.-M. Baribeau,