Thermoelectric properties of transmutation doped silicon crystals

This paper describes a method for determining the anisotropy parameter of thermoelectromotive force of electron-phonon drag (M) by deformation of n-Si in direction [001]; the experimental data on measuring of temperature dependence of the Hall effect, charge carrier lifetime, tensoresistance and tenso-thermoelectromotive force of transmutation doped n-Si crystals, which subjected to high-temperature annealing at T=1473K during 2 and 72 h, and cooled from the annealing temperature to the room one with 1, 15, 1000 K/min rates, were presented. It is shown that the anisotropy of drag thermoelectromotive force is greatly increased in the experiments with the transmutation doped silicon at 85 K, X→//∇T//[001](X≥0.6GPa) due to the action of high-temperature annealing.