Large magnetoresistance in a permalloy/Ba2FeMoO6 sputtered film

We observed a large magnetoresistance (MR) in a permalloy/Ba2FeMoO6 bi-layer film when compared with a Ba2FeMoO6 film made by room temperature sputtering and high temperature synthesis where the MR reached ~−17% at 10 K and ~−8% at 300 K and 8 T. Our results are consistent with the MR in the bi-layer film being dominated by spin-tunneling across the interface between the two layers. The bi-layer film has a nearly linear MR at 300 K and 330 K and at high fields that may prove useful for magnetic sensor devices.