Luminescent properties of Ba2SiO4:Eu3+ for white light emitting diodes

A red emitting phosphor Ba2SiO4:Eu3+ is synthesized by a high temperature solid-state reaction, and its luminescent properties are investigated. Ba2SiO4:Eu3+ phosphor has two regions in the excitation spectrum, one is assigned to the charge transfer state (CTS) band at about 285 nm, and the other originates from the intra-4f transitions at 350–500 nm. It can be effectively excited by 392 nm radiation excitation, and exhibit a series of sharp peaks. The strongest emission locates at 616 nm which attributes to the 5D0–7F2 transition of Eu3+, and the CIE chromaticity coordination is (0.629, 0.361). Effect of Eu3+ doped content on the emission intensity and the concentration quenching of Eu3+ in Ba2SiO4:Eu3+ are investigated. The results show that the optimum doped content is 2 mol% Eu3+, and the concentration quenching mechanism is the dipole–dipole interaction, and the critical energy transfer distance is approximately 2.197 nm. When codoped K+, the emission intensity of Ba2SiO4:Eu3+ can be further enhanced, and the optimum doped content is 2 mol% K+.