| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1810322 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
The valence band electronic structures of Mn- and/or Fe-doped In2O3, i.e., In2O3:Mn, In2O3:Fe, and In2O3:(Mn, Fe), are investigated by photoemission yield measurements. Significant changes are observed in the threshold energy of photoemission, depending on the doped magnetic ions, which indicates that an additional occupied band appears above the top of the valence band of In2O3 owing to doping with Mn and/or Fe ions. It is confirmed that the order of the threshold energies of photoemission, EPET, is EPET(In2O3:Mn)
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Daisuke Yamashita, Tsuyoshi Yoshioka, So Nishida, Tomoyuki Yamamoto,