| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1810403 | Physica B: Condensed Matter | 2013 | 4 Pages |
Abstract
The electrical properties of a nanoscale prototype capacitor-like cell structure using an amorphous Ag8In14Sb55Te23 (AIST) as the active material were investigated. A polarity-dependent reversible switching effect which is different from the amorphous–crystalline phase transformation has been observed. The reversible resistance switching between a high resistance state (HRS) and low resistance state (LRS) was induced by bias amplitude and polarity. The electrical resistance ratio of HRS/LRS was ∼10:1. The AIST phase change material is shown to be very promising for multi-state data storage applications.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Fengxiao Zhai, Guangfei Liang, Yang Wang, Yiqun Wu,