| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1810484 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
C mono-doped and C–In co-doped ZnO are investigated by the first-principles calculations. It is found that the C mono-doped ZnO is p-type with hole carriers locating nearby valence band maximum. Furthermore, a shallower C acceptor energy level appears in the band gap after incorporating In into C-doped ZnO system. Meantime, compared with C mono-doped ZnO, C–In co-doped ZnO has a lower formation energy, correspondingly a higher chemical stability, and thus to enhance the incorporation efficiency of C. These results suggest that C–In co-doping method provided an efficient technique for realizing p-type ZnO.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
G.Y. Yao, G.H. Fan, F. Zhao, J.H. Ma, J. Chen, S.W. Zheng, S.M. Zeng, L.F He, T. Zhang,