Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1810594 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
The crystallization dynamics of as-deposited amorphous Ge2Sb2Te5 films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ke Zhang, Simian Li, Guangfei Liang, Huan Huang, Yang Wang, Tianshu Lai, Yiqun Wu,